FIELD: electricity.
SUBSTANCE: the device comprises cells, and each cell consists of switching and informative metal-insulator-semiconductor FETs of n-type, switching and informative metal-insulator-semiconductor FETs of p-type, a power supply bus, zero potential bus, a clock bus.
EFFECT: ensuring bidirectional transmission of the shift register, increasing stability in conditions of essential parasitic capacitance of clock buses, minimization of the required IC chip area.
3 cl, 9 dwg
Title | Year | Author | Number |
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TWO-CYCLE DYNAMIC SHIFT REGISTER | 2014 |
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PUSH-PULL SHIFT REGISTER | 2014 |
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MULTICHANNEL SWITCHING DEVICE | 0 |
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SHIFT REGISTER BASED ON INSULATED-GATE FIELD-EFFECT TRANSISTORS | 0 |
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SHIFT REGISTER MEMORY CELL | 0 |
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SU680055A2 |
SILICON MULTIPLEXER | 2015 |
|
RU2602373C1 |
Authors
Dates
2014-10-10—Published
2013-07-10—Filed