FIELD: electricity.
SUBSTANCE: the device comprises cells, and each cell consists of switching and informative metal-insulator-semiconductor FETs of n-type, switching and informative metal-insulator-semiconductor FETs of p-type, a power supply bus, zero potential bus, a clock bus.
EFFECT: ensuring bidirectional transmission of the shift register, increasing stability in conditions of essential parasitic capacitance of clock buses, minimization of the required IC chip area.
3 cl, 9 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| TWO-CYCLE DYNAMIC SHIFT REGISTER | 2014 |
|
RU2556437C1 |
| SHIFT REGISTER | 2013 |
|
RU2522306C1 |
| SHIFT REGISTER | 2013 |
|
RU2527188C1 |
| TWO-STAGE DYNAMIC SHIFT REGISTER | 2014 |
|
RU2542898C1 |
| DYNAMIC SHIFT REGISTER | 2014 |
|
RU2542913C1 |
| PUSH-PULL SHIFT REGISTER | 2014 |
|
RU2549136C1 |
| MULTICHANNEL SWITCHING DEVICE | 0 |
|
SU1220123A1 |
| SHIFT REGISTER BASED ON INSULATED-GATE FIELD-EFFECT TRANSISTORS | 0 |
|
SU1269210A1 |
| SHIFT REGISTER MEMORY CELL | 0 |
|
SU680055A2 |
| SILICON MULTIPLEXER | 2015 |
|
RU2602373C1 |
Authors
Dates
2014-10-10—Published
2013-07-10—Filed