SEMICONDUCTOR GAS SENSOR Russian patent published in 2014 - IPC G01N27/12 

Abstract RU 2528118 C1

FIELD: chemistry.

SUBSTANCE: sensor contains a semiconductor base and a substrate, with the base being made of a polycrystalline film of cadmium sulphide, alloyed with zinc telluride, applied on the non-conducting substrate.

EFFECT: increase of the sensor sensitivity and manufacturability of its production.

3 dwg

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RU 2 528 118 C1

Authors

Kirovskaja Iraida Alekseevna

Karpova Elena Olegovna

Dates

2014-09-10Published

2013-02-01Filed