SEMICONDUCTOR GAS ANALYSER Russian patent published in 2014 - IPC G01N27/12 

Abstract RU 2526226 C1

FIELD: chemistry.

SUBSTANCE: in accordance with the invention a sensor contains a semiconductor base and a substrate, with the base being made of a polycrystalline film of cadmium telluride, doped with zinc sulphide, applied on the non-conducting substrate.

EFFECT: possibility of increasing the sensor sensitivity and technological effectiveness of its manufacturing.

3 dwg

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RU 2 526 226 C1

Authors

Kirovskaja Iraida Alekseevna

Kasatova Irina Jur'Evna

Dates

2014-08-20Published

2013-02-08Filed