FIELD: chemistry.
SUBSTANCE: invention relates to field of electroplating and can be used for manufacturing semiconductors. Method of precipitating copper on substarte, which contains surface elements of submicrometre size, which have hole diameter 30 nanometres or less, includes: a) contact with substrate of electric bath for precipitation of copper, containing source of copper ions, one or more accelerating agents and one or more inhibiting agents, selected from compounds of formula I where each radical R1 is independently selected from ethylene oxide copolymer and at least one more C3-C4 alkylene oxide, with said copolymer representing random copolymer, each radical R2 is independently selected from R1 or alkyl, X and Y independently represent spacer groups, with X having independent values for each repeating unit, selected from C1-C6 alkylene and Z-(O-Z)m, where each radical Z is independently selected from C2-C6 alkylene, n represents integer number, larger or equal 0, m represents integer number, larger or equal 1, in particular m equals 1-10, and ethylene oxide content in ethylene oxide copolymer and C3-C4 ethylene oxide constitutes from 30 to 70%, and b) creation of current density in substrate for time period sufficient for filling element of submicron size with copper.
EFFECT: obtaining homogeneous coating without voids and seams.
10 cl, 6 ex, 7 dwg, 1 tbl
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Authors
Dates
2014-09-27—Published
2010-03-25—Filed