FIELD: physics.
SUBSTANCE: according to the invention, there is provided a method for manufacturing solar cells, comprising the steps of forming a SiNx film over a second major surface of an n-type semiconductor substrate; forming a p-type diffusion layer over the first major surface of the n-type semiconductor substrate after the SiNx film formation step; and forming, on top of the p-type diffusion layer, a passivation film consisting of a SiO2 film or alumina films. A second version of the method is proposed, in which an n-type diffusion layer is formed over the second major surface of the p-type semiconductor substrate; the formation of a SiNx film over an n-type diffusion layer; forming the texture only on the first major surface of the p-type semiconductor substrate after the step of forming the SiNx film and forming, on top of the first major surface of the p-type semiconductor substrate, a passivation film consisting of a SiO2 film or alumina film, after the texture formation step. The solar panels manufactured by the methods described above are also proposed.
EFFECT: possibility of increasing the efficiency of photoelectric conversion.
12 cl, 1 tbl, 7 dwg
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Authors
Dates
2017-07-21—Published
2013-02-08—Filed