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2 540 623

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IPC

C30B33/04(2006-01-01)

C30B33/02(2006-01-01)

H01L21/263(2006-01-01)

C30B29/40(2006-01-01)

(21) (22)

Application

2013143528/05, 2013-09-26

(24)

Start date

2013-09-26

(22)

Actual filing date

2013-09-26

(45)

Published

2015-02-10

(72)

Inventor

Murashev Viktor NikolaevichLegotin Sergej AleksandrovichRyzhikov Igor' VeniaminovichZajtsev Sergej NikolaevichAbdullaev Oleg Raufovich

(73)

Holder

Federal'Noe Gosudarstvennoe Avtonomnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Issledovatel'Skij Tekhnologicheskij Universitet

METHOD OF FORMING HIGH-QUALITY HETEROSTRUCTURES OF LIGHT-EMITTING DIODES Russian patent published in 2015 - IPC C30B33/04 C30B33/02 H01L21/263 C30B29/40

Abstract RU 2540623 C1

FIELD: physics.

SUBSTANCE: invention can be used to produce high-quality semiconductor light-emitting diodes (LED) based on heterostructures of A³B⁵ compounds. The method includes irradiating a plate with heterostructures with integral electron flux with density of 10¹⁴-10¹⁷ el/cm² and energy of 0.3-10 MeV at a temperature not higher than minus 70°C, followed by rapid thermal annealing at a temperature higher than 600°C with photon flux in the visible spectrum with radiation intensity of 1-10 W/cm and energy higher than the band-gap of the semiconductor layer of the heterojunction the narrowest band-gap.

EFFECT: high injection capacity and external quantum efficiency of heterostructures of light-emitting diodes.

1 dwg

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RU 2 540 623 C1

Authors

Murashev Viktor Nikolaevich

Legotin Sergej Aleksandrovich

Ryzhikov Igor' Veniaminovich

Zajtsev Sergej Nikolaevich

Abdullaev Oleg Raufovich

Dates

2015-02-10—Published

2013-09-26—Filed