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2 554 304

(13)

(51)

IPC

H01L31/18(2006-01-01)

G01J5/20(2006-01-01)

H01L21/00(2006-01-01)

(21) (22)

Application

2013132987/28, 2013-07-16

(24)

Start date

2013-07-16

(22)

Actual filing date

2013-07-16

(45)

Published

2015-06-27

(72)

Inventor

Kuldin Nikolaj AleksandrovichPutrolajnen Vadim VjacheslavovichVelichko Andrej AleksandrovichProkhorov Kirill SergeevichPadorin Igor' Sergeevich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet"

METHOD OF OBTAINING SENSITIVE ELEMENT OF THERMAL RECEIVER MATRIX Russian patent published in 2015 - IPC H01L31/18 G01J5/20 H01L21/00

Abstract RU 2554304 C2

FIELD: chemistry.

SUBSTANCE: method of obtaining sensitive element of thermal receiver matrix based on vanadium oxide represents application of vanadium metal film and electrodes by methods of magnetron dispersion and further lift-off lithography on dielectric substrate. After that, high-density electric current is passed through vanadium metal film, which results in its heating and thermal oxidation. After structure heating and formation of oxide VO_x,current isswitched off, and cooling of formedthin-filmed element takes place.

EFFECT: invention makes it possible to considerably simplify method of manufacturing sensitive element of thermal receiver matrix.

2 cl, 1 dwg

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RU 2 554 304 C2

Authors

Kuldin Nikolaj Aleksandrovich

Putrolajnen Vadim Vjacheslavovich

Velichko Andrej Aleksandrovich

Prokhorov Kirill Sergeevich

Padorin Igor' Sergeevich

Dates

2015-06-27—Published

2013-07-16—Filed