METHOD FOR MANUFACTURING T-SHAPED GALVANIC GATE IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTOR Russian patent published in 2021 - IPC H01L21/335 

FIELD: electronic technology.

SUBSTANCE: invention relates to electronic technology, it is intended for the creation of discrete devices and ultra-high-frequency integrated circuits using high-power gallium nitride field-effect transistors. The method of manufacturing a T-shaped galvanic gate in a high-frequency field-effect transistor includes the selection of the active area of the transistor, the creation of ohmic contacts of the drain and source, the application of a thin masking coating on the surface of the contact layer of the semiconductor, the formation of a submicron gap in the masking coating by lithographic methods, the application of a thin conductive layer, the formation of a resistive mask on top of it, the removal of the conductive layer in the windows of the resistive mask, etching of the contact layer, the formation of thin-membrane metal T-shaped gates. Then there is the removal of the remnants of the thin conductive layers and the masking coating, passivation of the surface with a layer of dielectric, galvanic thickening of the drain and source contacts through the windows opened in the passivating layer of the dielectric. After removing the conductive layer in the windows of the resistive mask, an additional process of tanning the resist is carried out in order to electrically isolate the active surface of the contact layer from the conductive layers surrounding the window. The formation of a T-shaped gate is carried out by electrochemical precipitation of thin-membrane metal systems in the windows of a single-layer resistive mask, followed by its dissolution. For the formation of a T-shaped gate, single-layer resistive masks with a negative and positive slope of the walls are used.

EFFECT: reduced complexity of manufacturing a T-shaped galvanic gate in a high-frequency field-effect transistor.

1 cl, 2 dwg