FIELD: process engineering.
SUBSTANCE: invention relates to production of super pure silicon to be used in semiconductor production, for example, in fabrication of solar cells or microchips. Monosilane is used for decomposition and mixed with carrier gas composed of hydrogen or hydrogen mix with inert gas. The latter is heated in plasma generator before mixing to temperature higher than silicon fusion point. Thereafter mix of monosilane and carrier gas is fed into reactor. Gas carrier is separately heated to feed monosilane in preheated carrier gas to produce super pure silicon in liquid phase to be continuously discharged.
EFFECT: continuous operation of reactor.
7 cl, 1 dwg
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