METHOD AND DEVICE FOR OBTAINING PURE SILICON Russian patent published in 2008 - IPC C01B33/27 

Abstract RU 2337876 C1

FIELD: chemistry.

SUBSTANCE: invention pertains to chemical and electronic industry and can be used for obtaining highly pure silicon. Silicon containing substance is put into a melting pot with molten silicon through a system of pipes with 0.1-5 mm2 openings for obtaining gas bubbles. Thermal decomposition of the silicon bearing gas takes place. The obtained silicon replenishes the melt. The proposed invention allows for increasing output of the process and purity of the obtained silicon at a lower cost of the equipment and energy losses.

EFFECT: increased output of process and purity of obtained product at lower cost of equipment and energy losses.

6 cl, 3 dwg

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RU 2 337 876 C1

Authors

Zaddeh Vitalij Viktorovich

Strebkov Dmitrij Semenovich

Dates

2008-11-10Published

2007-04-17Filed