REACTOR FOR OBTAINING POLYCRYSTALLINE SILICON WITH APPLICATION OF MONOSILANE METHOD Russian patent published in 2013 - IPC C01B33/35 B01J19/00 

Abstract RU 2501734 C2

FIELD: chemistry.

SUBSTANCE: reactor (10) contains bottom (2), in which there are many jets (4), though which silicon-containing gas is supplied into reactor, multitude of reactor rods (6), also placed on bottom (2) and are at a distance from jets (4), and output opening (8) for gas, intended for supply of waste monosilane for enrichment and/or recycling, with output opening (8) for gas being placed on free end of internal tube (20). Internal tube (20) passes through of reactor bottom (2), with internal tube (20) containing external wall and internal wall, due to which intermediate space, in which there is circulation contour of cooling water.

EFFECT: effective, reliable and safe production of polycrystalline silicon.

13 cl, 11 dwg

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RU 2 501 734 C2

Authors

Shteklinger Robert

Dates

2013-12-20Published

2009-10-09Filed