FIELD: chemistry.
SUBSTANCE: invention can be used in chemical industry. Gas flow containing monosilane is fed into reactor and brought into contact with surface heated to temperature exceeding 800 °C. On the surface, a portion of the monosilane present in the gas stream is decomposed with deposition of the solid silicon layer, and therefore concentration of monosilane in gas flow is reduced. Gas flow is discharged from the reactor and treated, wherein monosilane is added to the gas stream. Then the treated gas flow is fed back into the reactor. During the settling in the closed system working pressure is set, which lies in range from 2.5 bar to 10 bar. Gas flow enters reactor with linear speed below 7.5 m/s. Concentration of monosilane in the gas stream fed into the deposition reactor is maintained in range of 0.5 to 5 vol%.
EFFECT: disclosed invention enables to obtain highly pure precipitated silicon.
10 cl, 1 dwg
