FIELD: physics.
SUBSTANCE: method of screening high-power InGaN/GaN light-emitting diodes (LEDs) includes taking measurements at room temperature in any sequence of forward and reverse biasing and current densities on LEDs, screening according to specific criteria, subsequent ageing of LEDs at specific conditions, repeating said measurements under initial conditions except one, with final screening of unreliable LEDs.
EFFECT: high accuracy of screening and wider field of use of LEDs by screening off unreliable LEDs with a service life shorter than 50000 hours of any manufacturer without prolonged tests.
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