SEMICONDUCTOR LIGHT-EMITTING ELEMENT Russian patent published in 2012 - IPC H01L33/06 H01L33/32 

FIELD: physics.

SUBSTANCE: semiconductor light-emitting element has a substrate, as well as Al_xGa_1-xN n-contact layer, active layer, barrier layer and p-contact layer. The substrate is made from AlN and the p-contact layer is made from GaN. There is a transition structure between the substrate and the n-contact layer consisting of identical pairs of layers made from a pure Al_xGa_1-xN compound. The number of pairs of layers is equal to 3-6. Thickness of layers on the substrate side is equal to 300-500 nm and on the side of the n-contact layer - 70-140 nm. Content of Al in layers on the substrate side is equal to 30-70% and in layers on the side of the n-contact layer - 10-60%.

EFFECT: high output power of the semiconductor light-emitting element in a side range of wavelengths and longer service life of the element.

5 cl, 1 tbl, 1 dwg