METHOD FOR DETERMINING RESISTANCE OF MICROWAVE SEMICONDUCTOR DEVICES TO EFFECT OF IONIZING RADIATIONS Russian patent published in 2016 - IPC G01R31/28 

FIELD: electricity.

SUBSTANCE: invention can be used for rejecting semiconductor devices. Core of invention is feeding to each device from a group of single-type instruments with constant supply voltages, applying a sequence of cycles of ionizing radiation, the dose of which is accumulated in each cycle in order to obtain caused by it increment of integral low-frequency noise of the device over the noise of its initial state, analyzing the increments of integral noise with growth of the cumulative dose, determining the increment of integral noise achieved by the moment of completion of the M-th cycle, from which there is the start of a firm registration of change of operating current of the device, rejecting instruments of those types, in which the average value of integral noise increment per a dose unit achieved by the moment of completion of the M-th cycle is higher than that of other types instruments.

EFFECT: provided is higher reliability of determining resistance of semiconductor devices to infiltrating ionizing radiations.

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