SEMICONDUCTOR LASER UNIT AND ITS MANUFACTURING PROCESS Russian patent published in 2005 - IPC

FIELD: laser engineering.

SUBSTANCE: first semiconductor laser unit capable of oscillating in stable transverse mode has multilayer structure wherein semiconductor layer of first polarity of conductivity, active layer, and semiconductor layer of second polarity of conductivity that differs from layer of first polarity of conductivity are disposed in tandem, as well as waveguide region for guiding light beam in direction perpendicular to width direction by limiting beam divergence toward width. Waveguide region includes first waveguide zone and second waveguide zone. In first waveguide zone beam is confined within active layer due to difference in refractive indices of active layer and zones on both ends by limiting active layer width; in second waveguide zone beam is confined by providing effective difference in refractive index of active layer.

EFFECT: enhanced perfection of laser beam directivity pattern in distant zone.

14 cl, 43 dwg