METHOD OF SCREENING HIGH-POWER InGaN/GaN LIGHT-EMITTING DIODES Russian patent published in 2014 - IPC H01L33/30 

FIELD: physics.

SUBSTANCE: method includes measuring spectral density of the low-frequency noise of each forward-biased light-emitting diode (LED) and current density in the range 0.1<J<10 A/cm² before and after the process of ageing a LED for least 50 hours. Ageing is carried out at temperature of the p-n-junction in the range T_J=50-150°C, ambient temperature in the range T_b=25-120°C and current density through the forward-biased LED in the range J=35-100 A/cm². LEDs with an operating life of less than 50000 hours are identified from the low-frequency noise spectral density thereof after the ageing process which is more than an order higher than values before the ageing process.

EFFECT: wider field of use owing to the screening of LEDs with an operating life shorter than 50000 hours for LEDs of any manufacturer, faster screening process.

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