MULTI-JUNCTION SEMICONDUCTOR SOLAR CELL Russian patent published in 2015 - IPC H01L31/725 

FIELD: physics.

SUBSTANCE: solar cell comprises a substrate on which there are at least two double-layer components with p-n junctions between the layers, interfaced with each other by at least two intermediate layers. The layers of the double-layer components and intermediate layers are made of a quaternary solid solution of AlInGaN. The intermediate layers and the interfaced fragments of the solar cell have the same band-gap. The double-layer components with p-n junctions between the layers and the intermediate layers interfaced therewith have the same lattice constant. The lattice constant is different in the intermediate layers. In the layers of the double-layer components with p-n junctions, the band-gap is different with a fixed value of the lattice constant.

EFFECT: invention improves the efficiency of converting solar radiation.

4 cl, 1 dwg, 2 tbl