SEMICONDUCTOR MULTIJUNCTION SOLAR CELL Russian patent published in 2009 - IPC H01L31/42 

FIELD: physics; conductors.

SUBSTANCE: semiconductor multijunction solar cell includes a substrate on which there are at least two interfaced double-layer In_1-xGa_xN components with p-n or n-p junctions between the layers, interfaced through a tunnel junction or ohmic contact, where the band gap of the components increases towards the source of solar energy. According to the invention, the solar cell has an additional double-layer component, made from In_1-x-yGa_xAl_yN with p-n or n-p junctions between the layers, placed on the side of the source of solar energy, interfaced with the adjacent double-layer component made from In_1-xGa_xN through a tunnel junction or ohmic contact.

EFFECT: invention increases efficiency of converting solar radiation into electrical energy.

2 cl, 1 dwg