HETEROSTRUCTURE OF MULTIJUNCTION SOLAR ELEMENT Russian patent published in 2015 - IPC H01L31/687 

FIELD: power industry.

SUBSTANCE: invention relates to semiconductor instruments sensitive to light. A heterostructure includes a substrate made from AlN, on which an arrangement is made for three two-layered components with p-n-junctions between layers, which are adjacent to each other and made from In_1-xGa_xN. Two-layered components are adjacent to each other with tunnel junctions. Width of a prohibited zone of components increases in the direction towards a surface intended for solar energy irradiation. Between the substrate and the two-layered component adjacent to the substrate there provided are relaxation layers made from solid solutions of metals of the third group. Relaxation layers allow reducing mismatch of a crystalline grid of the substrate and the two-layered components. Width of the prohibited zone of the two-layered components meets the following ratio: E_g1:E_g2:E_g3=1:2.23:3.08, where 0.65≤E_g1≤0.85.

EFFECT: due to such ratio of parameters of two-layered components, solar energy is absorbed in the whole range of a solar radiation spectrum, which allows improving conversion efficiency of solar energy to electrical energy.

3 cl, 1 dwg, 2 tbl