FIELD: physics.
SUBSTANCE: diode has a heterostructure which has a substrate, an emitting layer heavily doped with atoms of transition elements of the iron group, a semiconductor layer with ferromagnetic properties, an undoped semiconductor layer and a base and an injecting electrode. The layer with ferromagnetic properties is placed over the emitting layer, and the undoped semiconductor layer is placed between the layer with ferromagnetic properties and the injecting electrode. The diode can also contain an additional layer which improves parameters of the diode and does not block the spin polarisation effect of carriers in such a heterostructure.
EFFECT: increased intensity and degree of circular polarisation of radiation emitted by the diode.
3 dwg, 9 cl
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