THYRISTOR LASER Russian patent published in 2020 - IPC H01L33/30 H01S5/343 

FIELD: quantum electronic engineering.

SUBSTANCE: present invention relates to quantum electronic engineering, and more specifically to pulsed injection sources of laser radiation. Laser-thyristor, including substrate of n-type conductivity and available on it heterostructure, contains cathode area (1), including substrate of n-type conductivity (2) and at least one wide-zone layer of n-type conductivity (3), anode region (4) comprising a p-type conductivity contact layer (5) and at least one wide-band p-type conductivity layer (6), at least one of which is simultaneously a layer of optical limitation of the laser heterostructure and emitter, injecting holes into active region (13), first base region (7) adjacent to wide-zone layer (3) of cathode area (1), comprising at least one layer of p-type conductivity (8), second base region (9) adjacent to the first base region (7), comprising at least one wide-zone layer of n-type conductivity (10), which is simultaneously a layer of optical limitation of the laser heterostructure and emitter, injecting electrons into active region (13), waveguide region (12) located between anode region (4) and second basic area (9), including at least active region (13), optical Fabry-Perot resonator formed by a first naturally cleavage surface (14) with a deposited antireflection coating and a second naturally cleavage surface (15) coated with a reflective coating, first ohmic contact (16) to anode region (4) formed on the side of free surface of contact layer of p-type conductivity (5), and forming injection region through active region (13) second ohmic contact (18) to cathode area (1) formed on the side of free surface of n-type conductance (2), injection area (21) under first ohmic contact (16) is enclosed between first (22) and second (23) passive regions. Besides, in each passive region of the thyristor laser there is one group of mesa cavities and each of them includes first mesa cavity (11) located at a distance F>0.1*W, where W is the width of the first ohmic contact (16), mcm, from the nearest boundary of the first ohmic contact (16), bottom 17 of first mesa cavity (11) is located in the second base area (9), there is a third ohmic contact (20) to the second basic area (9), located on bottom 17 of first mesa cavity (11); at least one second mesa cavity (26) adjacent to first ohmic contact (16), bottom (27) of second mesa cavity (27) is located in anode region (4); third mesa cavity (28) located at distance G>0.1*D, where D is the width of the third ohmic contact (20), mcm, from the nearest boundary of the third ohmic contact (20), bottom 30 of third mesa cavity (28) is located in cathode area (1), wherein the available third naturally cleavage surface (24) is perpendicular to bottom 30 of third mesa cavity (28) located in the first passive region (22), and the fourth naturally cleavage surface (25) is perpendicular to bottom 30 of third mesa cavity (28) located in the second passive region (23).

EFFECT: laser-thyristor according to the invention provides increasing the maximum blocking voltage, increasing the output of injection current and divergence of laser radiation suitable for reduction of spreading value in plane parallel to heterostructure layers.

1 cl, 5 dwg