LASER-THYRISTOR Russian patent published in 2020 - IPC H01S5/00 H01L33/00 

FIELD: electricity.

SUBSTANCE: present invention relates to laser semiconductor engineering. Heterostructure-based laser thyristor comprises cathode region (1) comprising n-type substrate (2), wide-band p-type (3) layer, anode region (4), having a p-type contact layer (5), a wide-band p-type layer (6), which is simultaneously a layer of optical limitation of the laser heterostructure and an emitter, injecting holes into active region (13), first basic region (7) adjacent to wide-band layer of cathode area (1), including first p-type layer (8), second base region (9) adjacent to first base region (7), including at least one wide-band layer of n-type (10), which is simultaneously a layer of optical limitation of laser heterostructure and emitter, injecting electrons into active region (13), waveguide region (12) located between anode region (4) and second basic area (9), including quantum-size active region (13), resonator formed by chipped face (14) with antireflection coating and faceted face (15) with reflective coating, first ohmic contact (16) to anode region (4) formed on the side of free surface of contact layer of p-type (5), and forming injection region through active region (13) second ohmic contact (18) to cathode area (1) formed on the side of free surface of n-type substrate (2), meso-channel (11) etched to second base region (9), located along first ohmic contact (16), third ohmic contact (20) to the second basic area (9) located at bottom (17) of meso-channel (11). Between layer (3) of cathode area (1) and the first layer of p-type conductivity (8) of the first basic area (7) there is a second layer of p-type conductivity (21). Material parameters of layers of the first and second base regions satisfy certain expressions.

EFFECT: technical result consists in enabling possibility of increasing repetition frequency without reducing peak power of laser pulses.

4 cl, 2 dwg