CONTROL METHOD FOR TWO IN-SERIES REVERSE-CONDUCTING IGBT OF HALF BRIDGE CIRCUIT Russian patent published in 2015 - IPC H02M1/08 

FIELD: electricity.

SUBSTANCE: invention is related to control method for two in-series reverse-conducting IGBT (T1, T2) of half bridge circuit (2) with operating direct-current voltage (U_G), at that these reverse-conducting IGBT (T1, T2) have three switching states. According to the invention the method includes the following stages: setting of each reverse-conducting IGBT (T1, T2) of half bridge circuit (2) during steady-state condition for switching the preset control signal ( $$S_T^{*}$$ ) to "-15 V" switching state, maintenance of reverse-conducting IGBT (T1, T2) in "+15 V" switching state upon completion of the preset time interval (ΔT₁) upon transition of the preset control signal ( $$S_T^{*}$$ ) from switching off state to switching on state while current flows from emitter to collector, setting of reverse-conducting IGBT (T1, T2) upon completion of the preset time interval (ΔT₁) upon transition of the preset control signal ( $$S_T^{*}$$ ) from switching off state to switching on state if current flow is ensured from collector to emitter in this way, setting of each reverse-conducting IGBT (T1, T2) of half bridge circuit (2) to "+15 V" switching state for the second preset time interval (ΔT₂) upon transition of the respective preset control signal ( $$S_T^{*}$$ ) from switching on state to switching off state and setting of reverse-conducting IGBT (T1, T2) of half bridge circuit (2) upon completion of the second preset time interval (ΔT₂) to the third preset time interval (ΔT₃) to "0 V" switching state. Thus control method is obtained for two in-series IGBT (T1, T2) of half bridge circuit (2), which have three switching states.

EFFECT: recovered charge at lower passage voltage in regard to standard control method.

9 cl, 30 dwg