SWITCHING METHOD FOR CURRENT PHASE RECTIFIER WITH INSULATED GATE BIPOLAR TRANSISTOR (IGBT) OF REVERSE CONDUCTANCE Russian patent published in 2015 - IPC H03K17/82 

FIELD: electricity.

SUBSTANCE: invention is related to a method for switching of a current phase rectifier with an insulated gate bipolar transistor (IGBT) (T1) of reverse conductance operating in the diode mode to the IGBT of reverse conductance operating in the IGBT-mode (T2). The technical result is reached due to switching of the IGBT transistor (T1) operating in the diode mode upon completion of a preset time interval (ΔT1) upon change in a control signal (S*T1) of this IGBT (T1) into the off-state; thereafter switching-on of the IGBT transistor (T2) operating in the IGBT-mode takes place upon the preset time interval (ΔT3) upon change in a control signal (S*T2) of this IGBT (T2) into the on-state, at that this time interval (ΔT3) is essentially bigger than the time interval (ΔT1) of the IGBT transistor (T1) operating in the diode mode; thereafter the IGBT (T1) operating in the diode mode is switched off as soon as the current starts passing in the IGBT (T2) operating in the IGBT-mode with reverse conductance.

EFFECT: provision of less sensitivity to delay periods with ill-set allowances due to switching off of the first IGBT (T1) operating in the diode mode as soon as the current starts passing in the second IGBT (T2) operating in a certain mode.

9 cl, 11 dwg