FIELD: physics.
SUBSTANCE: described is an optoelectronic device, having a light-emitting field-effect transistor (LEFET) with an active layer of an organic semiconductor and a waveguide formed in the channel of the LEFET. The active layer is on top of the waveguide and the source and drain electrodes. The crest of the waveguide contains material having a higher refraction index than the organic semiconductor. The LEFET is biased to control the recombination position of charge carriers of opposite polarity in the channel. The crest is levelled with the recombination position such that light enters the crest of the waveguide in a controlled manner.
EFFECT: improved efficiency of inputting light into a waveguide.
30 cl, 14 dwg
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