MICROPOWER PHOTOSENSOR Russian patent published in 2015 - IPC G01S1/44 

Abstract RU 2554681 C1

FIELD: physics.

SUBSTANCE: micropower photosensor, comprising a photodiode, a differential amplifier and a field-effect transistor with a first resistor in the gate circuit, includes a second and a third resistor; the differential amplifier used is an amplifier with a programmable supply current. The second resistor is connected between the output and the inverting input of the differential amplifier, which is connected through the photodiode to its non-inverting input and the gate of the field-effect transistor, the drain of which is connected to the control input of the differential amplifier. The source of the field-effect transistor is connected through the third resistor to a null circuit to which the gate of the field-effect transistor is connected through the first resistor.

EFFECT: low consumption of supply current.

1 dwg

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RU 2 554 681 C1

Authors

Ivanov Jurij Borisovich

Dates

2015-06-27Published

2014-03-26Filed