HETEROJUNCTION PHOTOVOLTAIC CELL HAVING BACK CONTACT Russian patent published in 2015 - IPC H01L31/224 

Abstract RU 2555212 C2

FIELD: physics.

SUBSTANCE: photovoltaic cell comprises a crystalline semiconductor substrate (1), having a front side (1a) and a back side (1b); a front passivating layer (3) deposited on the front side (1a) of the substrate (1); a back passivating layer (2) deposited on the back side (1b) of the substrate (1); a first metal-coated area on the back passivating layer (2) and intended for collecting electrons; a second metal-coated area intended for collecting holes and having: a surface part located on the back passivating layer (2); and an inner part passing through the back passivating layer (2) and forming in the substrate (1) a region in which concentration of electron acceptors is higher than in the other part of the substrate (1), wherein the crystalline semiconductor substrate (1) is a substrate made of n-doped or p-doped crystalline silicon; the front passivating layer (3) comprises: a layer (6) of undoped hydrogenated amorphous silicon which is in contact with the substrate (1); and a layer (7) of doped hydrogenated amorphous silicon located thereon, characterised by p-type doping if the substrate (1) is a substrate with p-type conductivity, or n-type doping if the substrate (1) is a substrate with n-type conductivity; and/or the back passivating layer (2) comprises: a layer (4) of undoped hydrogenated amorphous silicon which is contact with the substrate (1); and, located thereon, a layer (5) of doped hydrogenated amorphous silicon, characterised by n-type doping. The invention also provides a module of photovoltaic cells, a method of producing photovoltaic cells and a method of producing a module of photovoltaic cells.

EFFECT: invention enables to produce a photovoltaic cell which can be made using a simpler method with fewer steps, which can be used on an industrial scale.

10 cl, 4 dwg

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RU 2 555 212 C2

Authors

Roka I Kabarrokas Per

Ljabrjun Marten

Dates

2015-07-10Published

2010-12-10Filed