STRUCTURE OF HETEROJUNCTION PHOTOELECTRIC CONVERTER WITH ANTI-EPITAXIAL SUB-LAYER Russian patent published in 2018 - IPC H01L31/747 

FIELD: physics.

SUBSTANCE: invention relates to silicon semiconductor technology, in particular to silicon photovoltaic converters manufactured according to heterostructure technology. Structure of a heterojunction photoelectric converter (PEC) includes a substrate in the form of a silicon wafer, on both sides of which a layer of passivation is applied in the form of layers of amorphous hydrogenated silicon, n-type semiconductor layer is deposited on one side of the silicon substrate with deposited passivating layers, and a p-type semiconductor layer is deposited on the opposite side, anti-epitaxial layer in the form of amorphous hydrogenated germanium or amorphous hydrogenated silicon-germanium with a thickness of up to 10 nm is applied to the surface of the silicon wafer in front of the passivation layers.

EFFECT: invention makes it possible to reduce surface recombination and improve the quality of passivation of the surface of a silicon wafer, the result is increased efficiency of solar cells.

3 cl, 2 dwg, 4 ex