FIELD: chemistry.
SUBSTANCE: invention relates to production of semiconductor materials and can be used in producing semiconductor devices. A method of producing a titanium oxide - titanium silicide heterostructure on a monocrystalline silicon substrate coated with a nanocrystalline titanium film includes photonic treatment of said substrate with xenon lamp radiation in the range of 0.2-1.2 mcm in an air atmosphere with a packet of pulses with duration of 10-2 s for 2.0-2.2 s with an energy dose in the range of 220-240 J·cm-2 to activate oxidation and silicide-formation reactions when forming the titanium oxide - titanium silicide heterostructure.
EFFECT: simple technique, considerably shorter time for making an article having a silicon substrate with a titanium oxide - titanium silicide heterostructure and low temperature load on the silicon.
2 dwg, 2 ex
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