FIELD: physics.
SUBSTANCE: proposed method of making silicon carbide on a silicon substrate involves heating the silicon substrate in a medium of carbon containing gases using pulse packets of xenon lamp radiation in the 0.2-1.2 mcm range, with pulse duration of 10-2 s, for a period of 1.5-2 s with density of the radiation of 240-260 J·cm-2.
EFFECT: simple technology; shorter time for making the product.
2 cl, 4 ex, 1 tbl, 4 dwg
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