FIELD: chemistry.
SUBSTANCE: method of growing epitaxial films of strontium disilicide on a silicon substrate by molecular beam epitaxy is to deposit an atomic strontium stream with a pressure PSr=(0,5÷3)×10-8 Torr on pre-cleaned and heated to Ts=500±20°C the surface of the silicon substrate to the formation of the strontium disilicide film of the required thickness.
EFFECT: creation of technology for the formation of SrSi2 epitaxial films by the method of molecular-beam epitaxy, the orientation of which is determined by the substrate, which will allow us to grow films with different predetermined properties.
3 cl, 4 dwg
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