FIELD: metallurgy.
SUBSTANCE: proposed process comprises growing of single crystals as tapes their depth exceeding the diameter of washers. Then, shaped tapes are cut perpendicular to their lengthwise axis to bars of square cross-section, square side being equal to tape depth. Thereafter, said bars are machined to required diameter to get cylindrical rods to be cut to washers.
EFFECT: high yield, fine structure and optical quality.
4 cl, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF GROWING SHAPED CRYSTALS OF REFRACTORY COMPOUNDS | 1999 |
|
RU2164267C1 |
METHOD OF MONOCRYSTALS GROWING FROM MELT | 2003 |
|
RU2222646C1 |
METHOD OF MONOCRYSTALS GROWING FROM A MELT | 2003 |
|
RU2222647C1 |
METHOD OF GROWING HEAT RESISTANT MONOCRYSTALS | 2008 |
|
RU2404298C2 |
METHOD FOR GROWING HIGH-TEMPERATURE MONOCRYSTALS BY SINELNIKOV-DZIOV'S METHOD | 2016 |
|
RU2626637C1 |
METHOD OF MONOCRYSTALS GROWING FROM A MELT | 2003 |
|
RU2230838C1 |
METHOD OF GROWING OF MONOCRYSTALS | 1994 |
|
RU2067626C1 |
DEVICE AND METHOD FOR GROWING PROFILED CRYSTALS OF HIGH-MELTING COMPOUNDS | 2012 |
|
RU2507320C2 |
PROCESS TO MANUFACTURE SILICON HOLLOW MONOCRYSTALS | 2006 |
|
RU2324017C1 |
METHOD OF GROWING PROFILED MONOCRYSTALS OF GERMANIUM FROM LIQUOR | 2012 |
|
RU2491375C1 |
Authors
Dates
2015-08-27—Published
2014-10-15—Filed