DEVICE FOR GROWTH OF MONOCRYSTAL FROM MELT BY CHOKHRALSKY VERTICAL PULLING TECHNIQUE Russian patent published in 2015 - IPC C30B15/00 C30B29/08 C30B15/14 

Abstract RU 2563485 C1

FIELD: metallurgy.

SUBSTANCE: claimed device comprises crucible 2 arranged in growing chamber 1 with adjacent heater 4 and heat insulator 5, seed holder 3 and thermal hollow above-crucible cylindrical shield 6. The latter is made of low-heat-conductivity material (quartz) fitted at crucible 2 from above to allow its lower part to be immersed in the melt. Said lower part has through cutouts. Note here that each of lower edges of said cutouts represents a line shaped to Archimedean arc or logarithmic spiral.

EFFECT: lower and more stable temperature gradient over crystallisation front and inside single crystal, higher quality of grown crystal.

2 cl, 2 dwg

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RU 2 563 485 C1

Authors

Podkopaev Oleg Ivanovich

Vaganov Vladimir Jur'Evich

Gerasimovich Viktor Ivanovich

Dates

2015-09-20Published

2014-11-27Filed