MICROELECTRONIC PRESSURE SENSOR WITH OVERLOAD-PROTECTED SENSITIVE ELEMENT Russian patent published in 2015 - IPC G01L19/06 

FIELD: physics.

SUBSTANCE: microelectronic pressure sensor with an overload-protected sensitive element comprises a housing 1, inside of which there is: a pressure sensitive element (PSE) - 2 with an integrated pressure transducer (IPT) - 3 with a thin flexible symmetrical membrane - 4 with tensoresistors - 5, electrical connection means - 6 and contact pads - 7, arranged on the front side - 8 of the membrane - 4, and with at least three hard centres - 9 on the reverse side - 10, and at least one mechanical safety stop - 11, rigidly connected to the peripheral part - 12 of the IPT - 3 and with a cavity - 13 therein, as well as at least one channel - 14 with a window - 15 for guiding pressure of the measured medium to the cavity - 13 of the mechanical safety stop - 11, wherein elements making up the PSE - 2, such as the membrane - 4, IPT - 3, front - 16 and reverse - 17 mechanical stops, are made of the same material and are connected by low-melting glass - 18 in a vacuum. The membrane - 4 of the IPT - 3 has a thickened supporting peripheral part - 12 and is configured to freely move under nominal pressure in the variation range thereof and for contact of at least one of the hard centres - 9 with the reverse mechanical stop - 17 when nominal pressure is exceeded. The reverse mechanical stop - 17 has a symmetrical cross-shaped protrusion - 20, located symmetrically about the longitudinal - 20 and transverse - 21 planes of symmetry of the hard centres - 9 on the flexible membrane - 4 and strength which is sufficient to withstand overload pressure, which exceeds critical burst pressure of the membrane of the IPT and openings - 22, located outside the projection of the exit window - 15 of the channel for guiding pressure of the measured medium towards the thin part of the flexible membrane - 4.

EFFECT: high accuracy.

4 cl, 7 dwg