FIELD: measurement technology.
SUBSTANCE: proposed pressure transducer characterized in reduced temperature drift and output signal hysteresis of bridge circuit has n silicon chip with flat working surface and thin membrane in chip center on its underside; formed on working surface of chip are p-type radial and tangential resistance strain gages interconnected by means of electric metal wires to form bridge circuit. Strain gages are connected to interconnected metal wires through heavily doped p+ intermediate regions specially formed beyond membrane and beyond its transfer regions. Heavily doped p+ intermediate regions enclose part of membrane, transfer region, and part of silicon base. Intermediate p+ regions are similar in size and shape.
EFFECT: reduced error, enhanced precision and reliability of pressure transducer.
1 cl, 1 dwg
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