FIELD: electricity.
SUBSTANCE: it is intended for production of thermoelectric materials (TEM) used in thermoelectric devices (TED). The procedure includes synthesis of solid solutions, homogenizing by annealing of the basis material in sealed ampoule, at that synthesis of copper chalcogenide is carried out by exposure at temperature higher than its melting temperature per 30-50°C while homogenization is performed by annealing of copper chalcogenide at temperature of 600-800°C, thereupon copper chalcogenide is subject to radiation with high-energy electrons with average energy of 7-9 MeV within the dose range of 1.2·1016-3.2·1018 el/cm2 at indoor temperature, then annealing is performed again at temperature of 400-600°C.
EFFECT: simplified production technology and improved thermoelectric performance of the material based on copper chalcogenide.
4 cl, 1 tbl
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