METHOD OF OBTAINING EPITAXIAL LAYERS OF CdHgTe OF p-TYPE OF CONDUCTIVITY Russian patent published in 2016 - IPC C30B19/04 C30B33/02 C30B29/46 H01L21/368 H01L31/296 

FIELD: electricity.

SUBSTANCE: invention relates to materials of electronic equipment, namely to methods of obtaining epitaxial layers of semiconductor solid solutions of Cd_xHg_1-xTe for making on their basis photovoltaic infrared radiation receivers. Method of obtaining epitaxial layers of Cd_xHg_1-xTe of p-type conductivity involves growing an epitaxial layer of Cd_xHg_1-xTe with a chemical composition within the range from x=0.19 to x=0.33 of molar ratio of cadmium telluride by liquid-phase epitaxy in a sealed quartz ampoule from a melt-solution based on tellurium at the temperature of 500÷515 °C and in situ annealing the epitaxial layer in vapors of charge, from which it was grown, first at the temperature of 350÷370 °C during 1÷2 hours, and then at the temperature of 200÷240 °C during 20÷24 hours. Technical result of the invention is reproducible obtaining the epitaxial layers of Cd_xHg_1-xTe of p-type of conductivity with the concentration of charge carriers of (0.5÷2.0)×10¹⁶ cm^-3 at 77K with high values of mobility of the charge carriers and uniform distribution of electrophysical characteristics throughout the thickness of the epitaxial layer, as well as reduced time for production of the epitaxial layers.

EFFECT: proposed is a method of obtaining epitaxial layers of semiconductor solid solutions of Cd_xHg_1-xTe for making on their basis photovoltaic infrared radiation receivers.

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