METHODS OF PEELING AND TRANSFERRING HETERO-EPITAXIALLY GROWN GRAPHENE FILMS AND PRODUCTS CONTAINING SAID FILMS Russian patent published in 2015 - IPC C30B33/00 C30B29/02 C01B31/02 B82B3/00 B82Y30/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of producing graphene thin films, which can be used as a transparent conductive coating. The method includes hetero-epitaxially growing the graphene thin film on a catalyst thin film; depositing a polymer-based coating on the surface of the graphene thin film opposite the surface of the catalyst thin film; curing the polymer-based coating and peeling off the graphene thin film and the polymer-based coating from the catalyst thin film, wherein the catalyst thin film is disposed on a support substrate formed on the side of the catalyst thin film opposite the surface of the graphene thin film, and a thin film release layer of zinc oxide is disposed between the support substrate and the catalyst thin film. Once formed, the thin graphene films can be separated from the support substrates and transferred to receiving substrates, for example, for incorporation into an intermediate or finished product.

EFFECT: grown, separated and transferred graphene can have low sheet resistance (for example, less than 150 ohms per unit area or lower, when doped) and high light transmission (at least, for example, in the visible and infrared range).

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