FIELD: process engineering.
SUBSTANCE: invention can be used for fabrication of micromechanical structures. Protection of the angles of 3D micromechanical structures on silicon plate with crystallographic orientation (100) at deep anisotropic etching in water solution of KOH hydroxide comprises making of mask pattern with angles protection elements. The latter feature diagonal shape on topological mask and are arranged 45 degrees to the stiff centre outlines. Note here that sides of said 3D micromechanical structures are defined from definite conditions.
EFFECT: higher quality and yield of said structures.
6 dwg, 2 tbl
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| PROTECTIVE MASK | 1979 |
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