METHOD FOR PROTECTION OF ANGLES OF 3D MICROMECHANICAL STRUCTURES ON SILICON PLATE DURING DEEP ANISOTROPIC ETCHING Russian patent published in 2016 - IPC B81B7/02 

FIELD: manufacturing technology.

SUBSTANCE: this invention consists in fact that protection of angles of 3D micro mechanical structures on silicon plate with crystallographic orientation (100) at deep anisotropic etching in water solution of potassium hydroxide KOH involves formation of mask pattern with angles protection elements adjacent to initial part of topological mask near point of intersection of sides of protected chip or three-dimensional microstructure on plate and continued beyond initial part of mask, wherein for protection of convex angles chip or three-dimensional microstructure of mask pattern with T-shaped elements containing lengthwise and crosswise part, wherein etching is carried out until silicon elements formed in area of mask protection angles are not etched away during anisotropic chemical etching to boundary of initial topological area of rigid centre micro-mechanical structures, longitudinal parts of two adjacent T-shaped elements protection are perpendicular to each other. At that, sizes of produced 3D micro-mechanical structures are determined from certain conditions.

EFFECT: possibility of widening range of 3D micro-mechanical structures or chips, improved linearity of converter characteristics and increasing loading capacity of primary converters.

1 cl, 4 dwg, 1 tbl