METHOD OF OUTER CORNER OVER-ETCHING COMPENSATION IN FIGURES ETCHED ON SILICON PLATES WITH SURFACE ORIENTATION (100) Russian patent published in 2008 - IPC H01L21/308 

FIELD: chemistry.

SUBSTANCE: invention concerns technological process of microsystems manufacturing. The method of outer corner over-etching compensation in solid figures etched on silicon plates with surface orientation by anisotropic chemical etching involves formation of protection layer on both surfaces of the silicon plate, formation of symmetrically superimposed topological masks of an etch figure with compensation elements on both sides of the silicon plate. Compensation plates take form of bridges transforming topological pattern of an etch figure with outer corners into a topological pattern with only inner corners. Then the plate undergoes anisotropic through etching from both sides simultaneously, so that the compensation elements are removed in the process of the silicon plate etching.

EFFECT: improver precision and repeatability of configuration and size of etched solids.

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