SILICON MICRO-MECHANICAL STRUCTURES CORNERS PROTECTING METHOD DURING THE ANISOTROPIC ETCHING Russian patent published in 2018 - IPC H01L21/308 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of instrumentation and can be used in the sensors silicon micromechanical sensitive components manufacturing, such as accelerometers, angular velocity sensors, pressure sensors. Essence of invention: in the three-dimensional micromechanical structures on the silicon wafer with a crystallographic orientation (100) corners protection method with the deep anisotropic etching in the potassium hydroxide KOH aqueous solution, forming the masking pattern with the corners protection elements, adjacent to the topological mask initial part next to the protected three-dimensional microstructure sides intersection point on the plate and extending beyond the mask initial part. Etching is carried out until the formed in the corners protection mask region silicon elements are not etched away in the process of anisotropic chemical etching to the micromechanical structure initial topological region boundary, corners protection elements are made in the form of T-square, an aggregate of squares with decreasing dimensions, where the each square center is the next square vertex, the initial T-square and the subsequent iterative T-squares side is determined by the formula.

EFFECT: invention provides increase in the micromechanical sensors metrological characteristics by increase in the conversion linearity.

1 cl, 5 dwg