FIELD: physics.
SUBSTANCE: invention relates to electronic engineering. Long-wave vertical-emitting laser includes semi-insulating substrate of GaAs, lower undoped distributed Bragg reflector (DBR), an intracavity contact layer of n-type, an n-type composite grid containing at least one oxide optical aperture. Laser also comprises an unalloyed optical resonator comprising an active medium based on at least three rows of quantum dots InAs/InGaAs, a p-type composite grid comprising at least one oxide current aperture, p-type intracavity contact layer, p-type contact layer with mode selection and upper dielectric DBR.
EFFECT: technical result consists in reduction of threshold current and electric resistance and in operation in mode of single-mode generation in spectral range 1,3 mcm.
18 cl, 2 dwg
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