METHOD OF PRODUCING HETEROSTRUCTURE OF NEAR-INFRARED SEMICONDUCTOR LASER WITH ALUMINIUM-FREE ACTIVE REGION Russian patent published in 2025 - IPC H01S5/323 

FIELD: laser equipment.

SUBSTANCE: invention relates to laser engineering, namely to a method of forming a quantum-well heterostructure with an aluminium-free active region based on GaInAsP solid solutions on GaAs substrates by MOS hydride epitaxy, and can be used for the manufacture of high-power single lasers, laser lines and gratings of the near infrared range of the spectrum with wavelength of 730–1100 nm, operating in a pulsed, quasi-continuous and continuous modes, used for pumping solid-state and fibre lasers, in various industries for cutting, welding of various materials, laser location, ranging and three-dimensional laser printing from metal powders. In the proposed method of producing a heterostructure of a semiconductor laser in the near infrared range with an aluminium-free active region GaInP/GaP/GaInAsP/GaInP switching mode of gaseous sources of elements of V group of periodic system is introduced, in which layers containing only phosphorus are grown from two sources of phosphorus hydride, at the beginning of the growth of the arsenic-containing layer, the supply of one of the phosphorus hydride sources is stopped and at the same time the supply of the arsenic hydride source is started; at the end of the growth of the arsenic-containing layer, reverse switching takes place, wherein molar flow rates of switched streams of sources of phosphorus and arsenic hydrides are related by a certain system of ratios.

EFFECT: present method of manufacturing a heterostructure of a semiconductor laser in the near infrared range increases efficiency of semiconductor lasers of continuous operation to 65% with stabilization of this result and increases their service life by 20 times.

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