THERMOELECTRIC MODULE Russian patent published in 2015 - IPC H01L35/30 H01L35/34 

FIELD: electricity.

SUBSTANCE: thermoelectric module comprises semiconductor elements of p-type and semiconductor elements of n-type conductivity, switching current leads that contact end parts of semiconductor elements, metal heat lines coupled to switching current leads and thermal-contact electrically insulating facilities intended for connection of switching current leads to thermal lines. Layers of one semiconductor material or several semiconductor materials with wide band gap are used as thermal-contact electrically insulating facilities intended for connection of switching current leads to thermal lines. The above layers are applied onto surface of thermal lines by vacuum arc welding with plasma flow separation. The following compounds may be used as semiconductor material with wide band gap - aluminium nitride AlN, zinc oxide ZnO or stannic oxide (IV) SnO₂ (Note: AlN has the widest band gap out of semiconductors having thermal conductivity within range from 50 up to 200 W/(m·K) and insulating properties up to 500 V. Thickness of the applied layers is varies mainly from 5 up to 40 mcm. Copper, aluminium or their alloys may be used as metal for thermal lines.

EFFECT: improved efficiency and reliability of thermoelectric module by increase in thermal conductivity and insulating properties of thermal-contact electrically insulating facilities intended for connection of switching current leads to thermal lines.

2 cl, 1 dwg