METHOD FOR SYNTHESIS OF MATERIAL, IN PARTICULAR DIAMOND, BY CHEMICAL VAPOUR DEPOSITION AND DEVICE FOR THEREOF REALISATION Russian patent published in 2016 - IPC C23C16/27 C23C16/42 C23C16/52 

FIELD: chemistry.

SUBSTANCE: invention relates to synthesis of material, in particular diamond and Si-Ge type semiconductor, by chemical vapour deposition (CVD). Diamond synthesis is realised by creation of plasma in vacuum chamber near substrate, made with possibility of placing diamond which is being synthesised, on it, with H₂ and carbon carrier substance being introduced into chamber to obtain in chamber gas, which contains substances - carriers of reactive carbon in form of radicals or molecules with non-filled electron shells, which said diamond is later synthesised from. Electromagnetic spectra of absorption and inelastic scattering of synthesised diamond are used to select absorption frequencies, favouring reactions, resulting in formation of synthesised material. Energy beams in form of photon beams with energy, determined by said absorption frequencies, are generated in the course of method, with said photon beams being injected into plasma, where substances - carriers of said atoms of reactive carbon absorb said photons, which possess energy, corresponding to diamond energy states.

EFFECT: higher rate of precipitation and improved quality of obtained material are provided.

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