METHOD AND DEVICE FOR DIAMOND SYNTHESIS BY CHEMICAL DEPOSITION FROM GAS PHASE Russian patent published in 2023 - IPC C23C16/27 C23C16/517 C23C16/503 C23C16/509 H01J37/32 

FIELD: diamond deposition.

SUBSTANCE: invention can be used in the manufacture of wear-resistant, heat-conducting and electrically insulating materials. The chemical vapour deposition chamber 1 is equipped with an inlet 2 and an outlet 3 for gas. Two electrodes are installed inside chamber 1 - anode 4 and cathode 5, generating plasma 28 and connected to a direct current source 6. Cathode 5 forms the substrate for diamond deposition. There are coaxially placed means for plasma compression between the electrodes 4 and 5, made in the form of a cylinder formed by the grating 20, or at least one ring, or a tube of refractory material. A carrier gas containing synthesized carbon atoms is introduced into the chamber. Plasma 28 is created near the substrate to activate the atoms of the carrier gas. Electrodes 4 and 5 may also be connected to an RF AC source and a magnetic field is applied near the substrate.

EFFECT: invention makes it possible to increase the rate of diamond deposition.

9 cl, 5 dwg