THIN-FILM THERMOELECTRIC DEVICE WITH BALANCED ELECTROPHYSICAL PARAMETERS OF p- AND n-SEMICONDUCTOR BRANCHES Russian patent published in 2016 - IPC G05D23/30 H05K7/20 G06F1/20 

Abstract RU 2587435 C2

FIELD: cooling.

SUBSTANCE: invention relates to cooling and heat removal systems, in particular to devices for cooling of computer processors. Thin-film thermoelectric device with balanced electric-physical parameters of p-and n-semiconductor branches is made in form of thermoelectric device, wherein p-and n-type semiconductors are made in form of parallelepipeds with different geometric dimensions, and thermal module is made in form of thin film on the reverse side of CPU crystal for intensification of heat transfer through substrate on heat sink, resulting in Joule heat releases become almost negligible, as well as identity of resistance of semiconductor branches is achieved.

EFFECT: high efficiency of cooling system.

1 cl, 1 dwg

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RU 2 587 435 C2

Authors

Ismailov Tagir Abdurashidovich

Gadzhiev Khadzhimurat Magomedovich

Nezhvedilov Timur Dekartovich

Chelushkina Tatyana Alekseevna

Dates

2016-06-20Published

2014-01-09Filed