FIELD: electricity.
SUBSTANCE: method for the formation of a multilayer ohmic contact includes the preliminary formation of a photoresist mask by lithography at a surface of gallium arsenide with n-conductance, treatment of the gallium arsenide surface free from the mask, sequential sputtering of a layer of an eutectic alloy of gold and germanium with a thickness of 10-100 nm, sputtering by means of a direct-current magnetron discharge of a layer of a nickel and vanadium alloy with vanadium content of 5-50 wt % with a thickness of 5-100 nm and application of a conductive layer, further removal of photoresist and contact sealing.
EFFECT: method realisation is simple, it provides an accurate reproducibility of preset parameters for contact structures in devices having a large square area.
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